DocumentCode
1602191
Title
Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes
Author
Garcia, H. ; Castan, H. ; Duenas, S. ; Bailon, L. ; Feijoo, P.C. ; Pampillon, M.A. ; Andres, E.S.
Author_Institution
Dipt. de Electr. y Electron. E.T.S.I. Telecomun., Univ. of Valladolid, Valladolid, Spain
fYear
2013
Firstpage
285
Lastpage
288
Abstract
The electrical properties of ScO-based MIS structures have been electrically studied. The high-k films were deposited by high pressure sputtering (HPS). Aluminum and Ti were used as gate electrodes. Defects inside the oxide seem to be reduced when increasing the chamber pressure. However, leakage current density increases in this case.
Keywords
MIS structures; aluminium; current density; electrodes; high-k dielectric thin films; leakage currents; scandium compounds; sputtering; titanium; Al; HPS; MIS structures; ScO; Ti; chamber pressure; electrical property; electrical study; gate electrodes; high pressure sputtering; high-k films; leakage current density; Capacitance; Electrodes; Films; High K dielectric materials; Logic gates; Silicon; Transient analysis; MIS capacitors; high-k dielectrics; high-pressure sputtering; scandium oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location
Valladolid
Print_ISBN
978-1-4673-4666-5
Electronic_ISBN
978-1-4673-4667-2
Type
conf
DOI
10.1109/CDE.2013.6481398
Filename
6481398
Link To Document