Title :
Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes
Author :
Garcia, H. ; Castan, H. ; Duenas, S. ; Bailon, L. ; Feijoo, P.C. ; Pampillon, M.A. ; Andres, E.S.
Author_Institution :
Dipt. de Electr. y Electron. E.T.S.I. Telecomun., Univ. of Valladolid, Valladolid, Spain
Abstract :
The electrical properties of ScO-based MIS structures have been electrically studied. The high-k films were deposited by high pressure sputtering (HPS). Aluminum and Ti were used as gate electrodes. Defects inside the oxide seem to be reduced when increasing the chamber pressure. However, leakage current density increases in this case.
Keywords :
MIS structures; aluminium; current density; electrodes; high-k dielectric thin films; leakage currents; scandium compounds; sputtering; titanium; Al; HPS; MIS structures; ScO; Ti; chamber pressure; electrical property; electrical study; gate electrodes; high pressure sputtering; high-k films; leakage current density; Capacitance; Electrodes; Films; High K dielectric materials; Logic gates; Silicon; Transient analysis; MIS capacitors; high-k dielectrics; high-pressure sputtering; scandium oxide;
Conference_Titel :
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location :
Valladolid
Print_ISBN :
978-1-4673-4666-5
Electronic_ISBN :
978-1-4673-4667-2
DOI :
10.1109/CDE.2013.6481398
