Title :
Degradation signatures of high power laser diodes
Author :
Jimenez, Joaquin ; Anaya, Jose Javier ; Hortelano, Vanesa ; Souto, J. ; Martin-Martin, A.
Author_Institution :
Dto. de Fis. de la Materia Condensada, Univ. de Valladolid, Valladolid, Spain
Abstract :
Rapid and catastrophic degradation of high power laser diodes occur because of the generation of extended defects inside the active parts of the laser structure during the laser operation. Local hot spots play a major role as actuators of the driven force leading to the formation of extended crystal defects. The laser power threshold for degradation is very sensitive to the packaging induced stress, and the thermal conductivity of the multilayer structure. The thermal conductivity of the QW and the barriers is suppressed by the low dimensionality but also by the quality of the interfaces being a major actor of the laser diode degradation. Modelling the thermal stresses induced by the hot spots in the active region of the diode permits to describe the degradation mechanisms of high power laser diodes.
Keywords :
actuators; electronics packaging; extended defects; laser beams; optical multilayers; quantum well lasers; thermal conductivity; thermal stresses; QW laser; active region; actuators; catastrophic degradation; extended crystal defects; high power laser diodes; interface quality; laser diode degradation; laser operation; laser power threshold; laser structure; local hot spots; multilayer structure; packaging induced stress; thermal conductivity; thermal stresses; Degradation; Diode lasers; Laser modes; Power lasers; Semiconductor lasers; Stress; Thermal stresses; Laser diodes; degradation; thermal conductivity; thermal stresses;
Conference_Titel :
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location :
Valladolid
Print_ISBN :
978-1-4673-4666-5
Electronic_ISBN :
978-1-4673-4667-2
DOI :
10.1109/CDE.2013.6481404