Title :
Transport in graphene on BN and SiC
Author_Institution :
Sch. of Electr., Arizona State Univ., Tempe, AZ, USA
Abstract :
We study the mobility and high field velocity in graphene placed upon BN or SiC. The transport is subject to the intrinsic phonons in graphene, as well as flexural modes, remote polar modes from the BN or SiC and impurities sited between the BN layer and the underlying oxide.
Keywords :
Monte Carlo methods; boron compounds; carrier mobility; graphene; phonons; silicon compounds; velocity; BN layer; C-BN; C-SiC; SiC; flexural modes; graphene transport; high field velocity; impurities; intrinsic phonons; mobility; polar modes; Atmospheric measurements; Educational institutions; Particle measurements; Scattering; Silicon carbide; graphene; mobility; velocity;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-4673-2198-3
DOI :
10.1109/NANO.2012.6322126
