DocumentCode :
1602430
Title :
On the highest order moment closure problem [semiconductor device modelling applications]
Author :
Kosik, R. ; Grasser, T. ; Entner, R. ; Dragosits, K.
Author_Institution :
Christian Doppler Laboratory for TCAD in Microelectron., Technische Univ. Wien, Vienna, Austria
Volume :
1
fYear :
2004
Firstpage :
118
Abstract :
Macroscopic transport models, based on the first six moments of Boltzmann´s equation are a natural extension to the drift-diffusion model (two moments) and the various energy-transport models (three or four moments). To close the system of equations, the sixth moment has to be expressed as a function of the lower order moments. We investigate the influence of the applied closure relation on the numerical properties of the six moments model, comparing three different methods, and propose a new solution to the closure problem. We present results of numerical solutions of six moments models and compare them to self-consistent Monte Carlo data.
Keywords :
Boltzmann equation; higher order statistics; maximum entropy methods; method of moments; semiconductor device models; Boltzmann equation moments; closure problem; cumulant; drift-diffusion model; energy-transport models; highest order moment closure method; macroscopic transport models; maximum entropy; moments method; self-consistent Monte Carlo data; semiconductor device modelling; six moments models; Boltzmann equation; Distribution functions; Entropy; Hot carriers; Laboratories; Microelectronics; Moment methods; Monte Carlo methods; Probability distribution; Samarium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2004. 27th International Spring Seminar on
Print_ISBN :
0-7803-8422-9
Type :
conf
DOI :
10.1109/ISSE.2004.1490389
Filename :
1490389
Link To Document :
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