Low cost spray-coating boron diffusion on n-type silicon

Author

Astorga, E.N. ; Martinez, E.O. ; Barrado, J.R.R.

Author_Institution

Lab. de Mater. y Superficies, Univ. de Malaga (UMA), Malaga, Spain

fYear

2013

Firstpage

325

Lastpage

328

Abstract

A low cost spray-coating technique is implemented to study the boron diffusion in n-type silicon wafers. Temperature and diffusion time have been the main factors on the resulting sheet resistance (R_sheet), reaching the highest values at high temperatures and diffusion times due to the formation of a thick borosilicate glass layer on the wafer surface. This layer has been etched off by HF dipping resulting on more doped emitters. Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) measurements have been carried out in order to analyze the correlation of R_sheet with the amount of sprayed precursor.

Keywords

boron; borosilicate glasses; elemental semiconductors; etching; high-temperature effects; secondary ion mass spectra; silicon; spray coating techniques; spray coatings; surface diffusion; surface resistance; time of flight mass spectra; B₂O₃-SiO₂; HF dipping; Si:B; TOF-SIMS; diffusion time; doped emitters; etching; high temperature effects; low-cost spray-coating boron diffusion; n-type silicon wafers; sheet resistance; sprayed precursor; thick borosilicate glass layer; time-of-flight secondary ion mass spectrometry; Boron; Doping; Photovoltaic cells; Photovoltaic systems; Silicon; back surface field; boron diffusion; spray-coating;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2013 Spanish Conference on

Conference_Location

Valladolid

Print_ISBN

978-1-4673-4666-5

Electronic_ISBN

978-1-4673-4667-2

Type

conf

DOI

10.1109/CDE.2013.6481408

Filename

6481408