Title :
Modeling of multilayer structures based on graded-band-gap semiconductors
Author :
Sokolovskii, Bogdan
Author_Institution :
Dept. of Electron., Ivan Franko Nat. Univ., Lviv, Ukraine
Abstract :
The study presents results of modeling of energy band gap diagram and current transfer in symmetric multilayer structures based on graded-band-gap semiconductors which are of interest for various optoelectronic applications. The case of homogeneously doped structures with constant gradients of the energy band gap and electron affinity has been investigated by means of analytical and numerical calculations.
Keywords :
carrier mobility; electron affinity; energy gap; multilayers; semiconductor process modelling; current transfer; electron affinity; energy band gap; energy band gap diagram; graded-band-gap semiconductors; homogeneously doped structures; multilayer structures; optoelectronic applications; symmetric multilayer structures; Charge carrier density; Doping profiles; Electrons; Elementary particle vacuum; Linear approximation; Nonhomogeneous media; Photonic band gap; Semiconductor process modeling; Shape;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2004. NUSOD '04. Proceedings of the 4th International Conference on
Print_ISBN :
0-7803-8530-6
DOI :
10.1109/NUSOD.2004.1345163
