Leakage current in a Si based nanopore structure and its influence on noise characteristics

We have measured leakage current in silicon based nanopore device in an aqua environment which typically shows the few nA current level. This current level is compared with the measured current density from the electrochemical reaction of the pristine Si wafer. It indicated that the exposed Si surface of nanopore device acts as an electrochemical reaction site. This leakage current is drastically reduced from <; 10 nA to <; 100 pA at 1V by the dielectric passivation on Si based nanopore device. Also, ionic current noise of these devices reduced from ~ 40 pA to 20 pA in correlation with the reduction of leakage current.