Numerical simulation of GaN-based intersubband transition photonic devices

Author

Suzuki, Nobuo

Author_Institution

Corp. Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan

fYear

2004

Firstpage

80

Lastpage

83

Abstract

A one-dimensional finite-difference time-domain (FDTD) simulator for ultrafast GaN/AlN intersubband photonic devices is described. Ultrafast response measured in a GaN/AlN ridge waveguide has been successfully reproduced by the simulator, taking the influences of background loss, inhomogeneous broadening, and 2-dimensional mode profile into consideration. The simulator was also utilized for feasibility study of intersubband optical amplifiers.

Keywords

III-V semiconductors; aluminium compounds; finite difference time-domain analysis; gallium compounds; high-speed optical techniques; optical switches; optical waveguides; ridge waveguides; semiconductor device models; semiconductor quantum wells; 2-dimensional mode profile; GaN-AlN; GaN-based photonic devices; background loss; inhomogeneous broadening; intersubband optical amplifiers; intersubband transition photonic devices; one-dimensional finite-difference time-domain simulator; optical switches; ridge waveguide; ultrafast intersubband photonic devices; Finite difference methods; Gallium nitride; Loss measurement; Numerical simulation; Optical losses; Optical waveguides; Semiconductor optical amplifiers; Stimulated emission; Time domain analysis; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2004. NUSOD '04. Proceedings of the 4th International Conference on

Print_ISBN

0-7803-8530-6

Type

conf

DOI

10.1109/NUSOD.2004.1345165

Filename

1345165