Title :
A liquid shear-stress sensor fabricated using wafer bonding technology
Author :
Ng, K.-Y. ; Shajii, J. ; Schmidt, M.A.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
The authors report on the fabrication and testing of a microfabricated silicon floating-element (120 mu m*140 mu m) shear-stress sensor designed to detect high shear stresses (1-100 KPa) in fluid environments. Wafer bonding technology is used to produce a thin (5 mu m) dielectrically isolated silicon layer (allowing piezoresistive transduction in a half-bridge readout scheme) which is further processed to develop the floating-element sensor. The authors describe the details of the sensor fabrication, modeling of the sensor response, and the results of testing. There is good agreement between the modeled response of the sensor and the experimental data, and the sensor has also maintained its structural integrity under severe conditions.<>
Keywords :
elemental semiconductors; integrated circuit technology; micromechanical devices; piezoelectric transducers; shear strength; silicon; stress measurement; 1 to 100 kPa; 5 micron; dielectric isolated layer; fabrication; half-bridge readout; liquid shear-stress sensor; microfabricated floating element sensor; piezoresistive transduction; response; testing; wafer bonding technology; Dielectrics; Fabrication; Isolation technology; Piezoresistance; Semiconductor device modeling; Sensor phenomena and characterization; Silicon; Stress; Testing; Wafer bonding;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.149041
