Some aspects on modeling and characterization of deep submicrometer CMOS gates driving lossless transmission lines

Author

Burdia, Danut ; Bozomitu, Radu-Gabriel ; Comsa, Ciprian-Romeo

Author_Institution

Fac. of Electron. & Telecommun., Gh. Asachi Tech. Univ., Iasi, Romania

Volume

2

fYear

2004

Firstpage

184

Abstract

The transient behavior of a CMOS gate driving an inductive-capacitive (lossless) transmission line is investigated. The case of input signal transition time smaller than twice the transmission line propagation delay is considered. Closed-form expressions for the output voltage and short-circuit power are derived. Also, a formula for calculating the transistor widths for the matched condition is obtained. The nth power law MOSFET model for short-channel devices is used. The final results are in very good agreement with SPICE simulations.

Keywords

CMOS integrated circuits; MOSFET; delays; semiconductor device models; transmission lines; SPICE; closed-form expressions; deep submicrometer CMOS gates; inductive-capacitive transmission line; lossless transmission lines; nth power law MOSFET model; output voltage; propagation delay; short-channel devices; short-circuit power; signal transition time; transient behavior; transistor widths; Closed-form solution; MOSFET circuits; Power MOSFET; Power system transients; Power transmission lines; Propagation delay; Propagation losses; Semiconductor device modeling; Transmission lines; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2004. 27th International Spring Seminar on

Print_ISBN

0-7803-8422-9

Type

conf

DOI

10.1109/ISSE.2004.1490416

Filename

1490416