Title :
Blue eight emission from ion beam synthesized semiconductor nanoclusters in SiO2 films
Author :
Van Borany, J. ; Rebohle, L. ; Skorupa, W. ; Heinig, K.-H.
Author_Institution :
Inst. of Ion Beam Phys. & Mater. Res., Forschungszentrum Rossendorf, Dresden, Germany
fDate :
6/21/1905 12:00:00 AM
Abstract :
Due to quantum confinement and surface effects semiconductor nanoparticles exhibit properties, which considerably differ to that of the bulk material. The topic of light emission from ion beam synthesized semiconductor nanoclusters is focused on recent success in extracting strong violet/blue photo- and electroluminescence from Si- or Ge- implanted SiO2 layers on Si
Keywords :
electroluminescence; elemental semiconductors; germanium; insulating thin films; ion implantation; nanostructured materials; photoluminescence; silicon; silicon compounds; SiO2 film; SiO2:Ge; SiO2:Si; blue light emission; electroluminescence; ion beam synthesis; photoluminescence; quantum confinement; semiconductor nanocluster; surface effect; violet light emission; Atomic layer deposition; Impurities; Ion beams; Ion implantation; Nanoparticles; Optical fibers; Physics; Potential well; Semiconductor films; Semiconductor materials;
Conference_Titel :
Industrial Electronics Society, 1999. IECON '99 Proceedings. The 25th Annual Conference of the IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-5735-3
DOI :
10.1109/IECON.1999.822172
