DocumentCode
1603507
Title
Three-dimensional topography simulation based on a level set method [deposition and etching processes]
Author
Sheikholeslami, A. ; Heitzinger, C. ; Badrieh, F. ; Puchner, H. ; Selberherr, S.
Author_Institution
Inst. for Microelectron., Tech. Univ. Vienna, Austria
Volume
2
fYear
2004
Firstpage
263
Abstract
We present a general 3D topography simulator for the simulation of deposition and etching processes. The simulator is called ELSA (enhanced level set applications). ELSA is based on a level set method including narrow banding and a fast marching method. Modules for the transport of species, for surface reaction, and for the level set method are its basis.
Keywords
etching; liquid phase deposition; semiconductor process modelling; surface topography; vapour deposition; 3D topography simulator; ELSA; deposition processes; etching processes; fast marching method; hyperbolic partial differential equation; level set method; narrow banding; species transport; surface reaction; topography simulation; Electronic equipment testing; Etching; Joining processes; Level set; Microelectronics; Narrowband; Reflection; Rough surfaces; Surface roughness; Surface topography;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2004. 27th International Spring Seminar on
Print_ISBN
0-7803-8422-9
Type
conf
DOI
10.1109/ISSE.2004.1490431
Filename
1490431
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