Design and Characterization of Low Phase Noise C-band SiGe HBT Amplifier

Author

Shtin, Nicolas A. ; Loa, Rubén Ortiz ; Romero, José Mauricio López ; Prokhorov, Eugen

Author_Institution

CINVESTAV-lPN, Queretaro

fYear

2007

Firstpage

217

Lastpage

220

Abstract

This paper deals with the design and experimental characterization of C-band microwave amplifier based on commercial SiGe hetero-junction bipolar transistor (HBT). In this design an impedance-matching technique that allows realization of the HBT amplifiers having a maximum gain within 4... 6 GHz frequency range is developed. As a result of this approach a low phase noise amplifier providing a 13 dB gain at 4.6 GHz and about 1 GHz bandwidth has been designed. In order to characterize a phase noise of the designed amplifier a phase noise measurement setup based on a carrier suppression technique was developed. A measured amplifier´s phase noise is proved to be lower than -160 dBc/Hz at 1 kHz Fourier frequency.

Keywords

germanium compounds; heterojunction bipolar transistors; impedance matching; microwave amplifiers; silicon compounds; C-band microwave amplifier; SiGe; SiGe hetero-junction bipolar transistor amplifier; bandwidth 1 GHz; carrier suppression; frequency 1 kHz; frequency 4 GHz to 6 GHz; gain 13 dB; impedance-matching technique; low phase noise amplifier; phase noise measurement setup; Bipolar transistors; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Microwave amplifiers; Noise measurement; Phase measurement; Phase noise; Silicon germanium; Hetero-junction bipolar transistor; impedance-matching network; maximum available gain; phase noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Electronics Engineering, 2007. ICEEE 2007. 4th International Conference on

Conference_Location

Mexico City

Print_ISBN

978-1-4244-1166-5

Electronic_ISBN

978-1-4244-1166-5

Type

conf

DOI

10.1109/ICEEE.2007.4345009

Filename

4345009