• DocumentCode
    1603678
  • Title

    Room temperature electrical bonding technique based on titled copper nanowire fastener with anisotropic adhesion properties

  • Author

    Wang, Peng ; Ju, Yang ; Hosoi, Atsuchi ; Song, Yuanhui

  • Author_Institution
    Dept. of Mech. Sci. & Eng., Nagoya Univ., Nagoya, Japan
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presented a room temperature bonding technique based on copper nanowire. A structure with copper nanowire array growing on the patterned areas of the silicon substrate was prepared through template-assistant electro-deposition. Through pressing the tilted and straight nanowire arrays against each other, the van der Waals interactions between the interconnected nanowires resulted in the mechanical bonding and electrical connectivity. This room temperature bonding technique exhibited anisotropic adhesion properties. The maximum adhesive strength of ~ 9.36 N/cm2 and electrical resistance of 0.3 Ω (areas, A~3.14 mm2) were obtained. Hence, it might have important implications for the assembly of components in the micro electronics.
  • Keywords
    adhesion; adhesive bonding; assembling; copper; electric resistance; electrodeposition; interconnections; nanowires; silicon; van der Waals forces; anisotropic adhesion property; component assembly; copper nanowire array; electrical connectivity; electrical resistance; interconnected nanowires; maximum adhesive strength; mechanical bonding; microelectronics; patterned areas; room temperature bonding technique; room temperature electrical bonding technique; silicon substrate; straight nanowire arrays; template-assistant electro-deposition; tilted nanowire arrays; titled copper nanowire fastener; van der Waals interactions; Copper; Electric variables measurement; Mechanical factors; Nanoscale devices; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
  • Conference_Location
    Birmingham
  • ISSN
    1944-9399
  • Print_ISBN
    978-1-4673-2198-3
  • Type

    conf

  • DOI
    10.1109/NANO.2012.6322167
  • Filename
    6322167