Influence of mole fraction variation of binary metal gate on SON MOSFET device performance

Author

Bhattacharyya, Gargee ; Shee, Sharmistha ; Dutta, Pranab K. ; Sarkar, Subir Kumar

Author_Institution

Dept. of Electron. & Telecommun. Eng., Jadavpur Univ., Kolkata, India

fYear

2014

fDate

9-11 Jan. 2014

Firstpage

1

Lastpage

4

Abstract

Work function engineering with continuous horizontal mole fraction variation in a binary metal alloy gate has been proposed already on silicon on nothing (SON) MOSFET. Presently, concept of work function engineering by mole fraction variation along both vertical as well as horizontal direction in a binary alloy gate is applied analytically in our model. Effects of this vertical mole fraction variation on various device parameters such as threshold voltage, drain current, transconductance, drain conductance and voltage gain are studied and compared with the model suggested by Manna et al. and an improvement of overall performance has been observed.

Keywords

MOSFET; semiconductor device models; work function; SON MOSFET device performance; binary metal alloy gate; continuous horizontal mole fraction variation; device parameters; drain conductance; drain current; mole fraction variation; silicon on nothing MOSFET; threshold voltage; transconductance; vertical mole fraction variation; voltage gain; work function engineering; Analytical models; Logic gates; MOSFET; Mathematical model; Metals; Silicon; Threshold voltage; Binary alloy gate; drain conductance; drain current; silicon-on-nothing (SON); threshold voltage; work function engineering gate;

fLanguage

English

Publisher

ieee

Conference_Titel

Advances in Electrical Engineering (ICAEE), 2014 International Conference on

Conference_Location

Vellore

Type

conf

DOI

10.1109/ICAEE.2014.6838567

Filename

6838567