A high performance 2.4 GHz GaAs HBT class J power amplifier

Author

Tao Chen ; Feng Wang ; Xiaohong Sun ; Jianhui Wu

Author_Institution

Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China

fYear

2014

fDate

11-13 July 2014

Firstpage

1

Lastpage

4

Abstract

A 2.4 GHz GaAs HBT Class J power amplifier (PA) was presented. This paper analyzed the nonlinear output capacitor character of GaAs HBT, and proposed the load impedance design requirement for high performance power amplifier. The nonlinear output capacitor of transistors with a paralleled lumped capacitor off chip was used to improve the performance of Class J PA. The implemented 2.4 GHz Class J PA shows a saturated output power of 29.5 dBm, with a maximum power added efficiency (PAE) of 51.6 %. Compared with the same biased Class AB PA, the output power is improved by 1.3 dB and the maximum PAE is enhanced by 9.2 %.

Keywords

UHF power amplifiers; gallium arsenide; heterojunction bipolar transistors; GaAs; HBT class J power amplifier; PAE; efficiency 51.6 percent; frequency 2.4 GHz; high performance PA; load impedance design requirement; nonlinear output capacitor character; paralleled lumped capacitor off chip; power added efficiency; Capacitance; Capacitors; Harmonic analysis; Heterojunction bipolar transistors; Impedance; Power amplifiers; Power generation; Class J; GaAs HBT; efficiency; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Computing, Communication and Networking Technologies (ICCCNT), 2014 International Conference on

Conference_Location

Hefei

Print_ISBN

978-1-4799-2695-4

Type

conf

DOI

10.1109/ICCCNT.2014.6963062

Filename

6963062