DocumentCode :
160423
Title :
Pull-up/pull-down line impedance matching methodology for high speed transmitters
Author :
Durgaryan, Armen ; Balabanyan, Abraham ; Melikyan, Vazgen ; Abugharbieh, Khaldoon
Author_Institution :
Synopsys Armenia CJSC, Yerevan, Armenia
fYear :
2014
fDate :
28-30 May 2014
Firstpage :
1
Lastpage :
4
Abstract :
A design and simulations methodology that detects and compensates for NMOS and PMOS transistor resistance variation is presented. The proposed methodology provides a robust mechanism to match the transmitter impedance to the line impedance which minimizes reflection and improves signal quality. A mixed signal approach, where an analog circuit detects the resistance variation, and a digital circuit uses the data to control the analog compensation circuit, is used. The system is designed in 28 nm CMOS process and simulated using Synopsys mixed mode simulation tools. Simulations show that worst case mismatch due to process, voltage and temperature variation is 2.7%.
Keywords :
CMOS integrated circuits; impedance matching; integrated circuit reliability; mixed analogue-digital integrated circuits; CMOS process; NMOS transistor resistance variation compensation; PMOS transistor resistance variation compensation; analog circuits; analog compensation circuit; digital circuit; high speed transmitters; mixed signal approach; pull-down line impedance matching method; pull-up line impedance matching method; resistance variation detection; size 28 nm; transmitter impedance; CMOS integrated circuits; Calibration; Impedance; MOS devices; Resistance; Resistors; Transmitters; 28nm CMOS; PVT compensation; calibration; mixed signal simulation; pull-down; pull-up; replica; resistance variation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IC Design & Technology (ICICDT), 2014 IEEE International Conference on
Conference_Location :
Austin, TX
Type :
conf
DOI :
10.1109/ICICDT.2014.6838589
Filename :
6838589
Link To Document :
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