Field Emission from Palladium Oxide Nanostructures Grown on Si Substrates at Atmospheric Pressure

In this work the field emission at atmospheric pressure from palladium oxide (PdO) nanostructures grown on Si (111) is demonstrated. The process for the growth of PdO nanostructures with average height of 9-45 nm is reported. The structure used for measuring de field emission current posses a diode configuration with a separation between cathode and anode plates of 5.6 mum. The current-voltage (I-V) characteristics of the developed structure were observed with voltages between +100 V operating at atmospheric pressure conditions. The base current of the developed structures without nanoemitters was of 1-4 nA. The maximum current measured for PdO film nanoemitters was of 100 nA.