Title :
Thin Film Bulk Acoustic Wave Resonators for their Application in Microwave Filters
Author :
Sánchez, G. F Pérez ; Morales-Acevedo, Arturo ; Jackson, Brad R. ; Saavedra, Carlos E.
Author_Institution :
CINVESTAV-IPN, Mexico City
Abstract :
Thin film bulk acoustic wave resonator (FBAR) devices have been fabricated using ZnO films grown by RF magnetron sputtering. The FBARs have been characterized by measuring their microwave frequency performance from 2-5 GHz, It was found that the fundamental resonance frequency was 2.367 GHz. The values for the insertion loss (S21), quality factor (Qs) and the effective electromechanical coupling coefficient (keff 2) are: 2.198 dB, 20 and 1.15%, respectively. A circuit model based on the Butterworth Van-Dyke model was used to model the FBAR and the energy losses in this device.
Keywords :
Butterworth filters; microwave filters; resonators; sputtering; thin film devices; thin films; Butterworth Van-Dyke model; RF magnetron sputtering; ZnO; circuit model; effective electromechanical coupling coefficient; energy loss; frequency 2 GHz to 5 GHz; frequency 2.367 GHz; insertion loss; microwave filter; microwave frequency performance; quality factor; resonance frequency; thin film bulk acoustic wave resonator; Acoustic waves; Film bulk acoustic resonators; Magnetic separation; Microwave devices; Microwave filters; Resonator filters; Sputtering; Thin film devices; Transistors; Zinc oxide; FBAR; MBVD; Resonator; Zinc Oxide; microwave filters;
Conference_Titel :
Electrical and Electronics Engineering, 2007. ICEEE 2007. 4th International Conference on
Conference_Location :
Mexico City
Print_ISBN :
978-1-4244-1166-5
Electronic_ISBN :
978-1-4244-1166-5
DOI :
10.1109/ICEEE.2007.4345039
