Thin Film Bulk Acoustic Wave Resonators for their Application in Microwave Filters

Author

Sánchez, G. F Pérez ; Morales-Acevedo, Arturo ; Jackson, Brad R. ; Saavedra, Carlos E.

Author_Institution

CINVESTAV-IPN, Mexico City

fYear

2007

Firstpage

353

Lastpage

356

Abstract

Thin film bulk acoustic wave resonator (FBAR) devices have been fabricated using ZnO films grown by RF magnetron sputtering. The FBARs have been characterized by measuring their microwave frequency performance from 2-5 GHz, It was found that the fundamental resonance frequency was 2.367 GHz. The values for the insertion loss (S₂₁), quality factor (Qs) and the effective electromechanical coupling coefficient (k_eff ²) are: 2.198 dB, 20 and 1.15%, respectively. A circuit model based on the Butterworth Van-Dyke model was used to model the FBAR and the energy losses in this device.

Keywords

Butterworth filters; microwave filters; resonators; sputtering; thin film devices; thin films; Butterworth Van-Dyke model; RF magnetron sputtering; ZnO; circuit model; effective electromechanical coupling coefficient; energy loss; frequency 2 GHz to 5 GHz; frequency 2.367 GHz; insertion loss; microwave filter; microwave frequency performance; quality factor; resonance frequency; thin film bulk acoustic wave resonator; Acoustic waves; Film bulk acoustic resonators; Magnetic separation; Microwave devices; Microwave filters; Resonator filters; Sputtering; Thin film devices; Transistors; Zinc oxide; FBAR; MBVD; Resonator; Zinc Oxide; microwave filters;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Electronics Engineering, 2007. ICEEE 2007. 4th International Conference on

Conference_Location

Mexico City

Print_ISBN

978-1-4244-1166-5

Electronic_ISBN

978-1-4244-1166-5

Type

conf

DOI

10.1109/ICEEE.2007.4345039

Filename

4345039