1 Tbit/inch2 very high-density recording in polycrystalline PZT/SRO/SiO2/Si thin film

We demonstrate very high-density ferroelectric probe storage experiments of 1 Tbit/inch2 in polycrystalline Pb(Zr, Ti)O3 (PZT) thin film for the first time. Very thin polycrystalline PZT film with the thickness of 40 nm was successfully deposited on silicon substrate with SrRuO3 (SRO) electrode using liquid delivery metal-organic chemical vapor deposition (MOCVD) method. The PZT film has very homogeneous grains with the diameter around 30 nm. The roughness of the PZT film was reduced less than 1 nm by using chemical mechanical polishing (CMP) process to perform very high-density ferroelectric probe storage experiments. Very small ferroelectric domain inversion characteristics of the PZT film are evaluated by applying voltage pulses using a conductive cantilever. The PZT film has a very high-controllability for domain-inversion. The fabrication process of the PZT film has also a high productivity. Therefore, our PZT film has a potential to be a mass productive ferroelectric recording media for high-density storage system.