Title :
ALD ZrO2 processes for BEoL device applications
Author :
Weinreich, W. ; Seidel, K. ; Polakowski, P. ; Riedel, S. ; Wilde, Lutz ; Triyoso, D.H. ; Nolan, M.G.
Author_Institution :
Fraunhofer-Center Nanoelectronic Technol., Fraunhofer Inst. for Photonic Microsyst., Dresden, Germany
Abstract :
In this paper three different ZrO2 ALD processes are studied as high-k dielectric in BEoL device applications. One metal organic precursor is compared to a halide precursor used with two different oxidizing agents. The structure, composition and morphology of the films are analyzed on bare Si wafers and the electrical properties such as capacitance, leakage and reliability are investigated on fully integrated BEoL decoupling capacitors. One of the halide ALD processes is identified as the most promising candidate for BEoL capacitor applications.
Keywords :
atomic layer deposition; capacitors; high-k dielectric thin films; reliability; zirconium compounds; BEoL device; Si; ZrO2; bare silicon wafers; capacitance; electrical properties; fully integrated BEoL decoupling capacitors; halide ALD processes; halide precursor; high-k dielectric; leakage; metal organic precursor; oxidizing agents; reliability; Capacitance; Capacitors; Films; High K dielectric materials; Leakage currents; Temperature measurement; Tin; BEoL application; MIM capacitors; atomic layer deposition;
Conference_Titel :
IC Design & Technology (ICICDT), 2014 IEEE International Conference on
Conference_Location :
Austin, TX
DOI :
10.1109/ICICDT.2014.6838604
