DocumentCode
1604609
Title
Electrical properties of Pb(Zr,Ti)O3/CeO2/Si MFIS structure fabricated by chemical mechanical polishing (CMP) damascene process
Author
Kim, Nam-Hoon ; Ko, Pil-Ju ; Lee, Woo-Sun
Author_Institution
School of Information and Communication Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon 440-746, Korea
Volume
2
fYear
2008
Firstpage
1
Lastpage
2
Abstract
Metal-ferroelectric-insulator-silicon field-effect-transistors (MFISFETs) of Au/PZT/CeO2/Si were fabricated by the novel method of chemical mechanical polishing (CMP) damascene process. The vertical sidewall without the surface and/or plasma damage could be easily fabricated by it. The typical ferroelectric characteristics were sucessfully obtained although the remanent polarization value was low.
Keywords
Chemical processes; Etching; Ferroelectric materials; Gold; Magnetic field induced strain; Mechanical factors; Plasma applications; Plasma chemistry; Plasma devices; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location
Santa Re, NM, USA
ISSN
1099-4734
Print_ISBN
978-1-4244-2744-4
Electronic_ISBN
1099-4734
Type
conf
DOI
10.1109/ISAF.2008.4693729
Filename
4693729
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