Title :
A 13dBm 60GHz-band injection locked PA with 36% PAE in 65nm CMOS
Author :
Törmänen, Markus ; Lindstrand, Jonas ; Sjöland, Henrik
Author_Institution :
Electr. & Inf. Technol., Lund Univ., Lund, Sweden
Abstract :
A 60GHz fully integrated injection locked power amplifier (PA) with single-ended input and output signals is demonstrated. The PA core is composed of an NMOS cross-coupled pair together with NMOS current injecting transistors. On-chip transformers are used as baluns for balanced signal conversion. Using a 1.2V supply the PA achieves an output power (Pout) of 13dBm and a power added efficiency (PAE) of 36% at 58GHz. It is implemented in a standard 65nm LP CMOS process and occupies a chip area of 0.54×0.29 mm2 including pads.
Keywords :
CMOS integrated circuits; baluns; injection locked amplifiers; millimetre wave power amplifiers; transformers; LP CMOS process; NMOS cross-coupled pair; NMOS current injecting transistors; balanced signal conversion; baluns; frequency 58 GHz; frequency 60 GHz; fully integrated injection locked power amplifier; injection locked PA; on-chip transformers; power added efficiency; size 65 nm; voltage 1.2 V; CMOS integrated circuits; CMOS technology; Frequency measurement; Gain; Impedance matching; Power amplifiers; Power generation; CMOS integrated circuits; Injection-locked oscillators; MMICs; Millimeter wave integrated circuits; Power amplifiers;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4577-2034-5
