DocumentCode :
1604786
Title :
Chemically amplified fullerene resists, spin-on fullerene hardmasks and high aspect ratio etching
Author :
Frommhold, Andreas ; Yang, Dong X. ; Manyam, Jedsada ; Manickam, Mayanditheuar ; Tarte, Edward ; Preece, Jon A. ; Palmer, Richard E. ; Robinson, Alex P G
Author_Institution :
Sch. of Chem. Eng., Univ. of Birmingham (UoB), Birmingham, UK
fYear :
2012
Firstpage :
1
Lastpage :
6
Abstract :
As resolution requirements increase there is a need for high performance ultra thin resists, which has led to significant interest in molecular resists. We have previously described a fullerene based resist whose electron beam lithography properties include sparse resolution of ~12 nm, half pitch ~20 nm, sub 5 nm linewidth roughness (LWR), sub 10 μC/cm2 sensitivity, and high etch durability. The material shows extremely wide process latitude and LWR <;2 nm in sparse features. Initial results of exposure via EUV lithography indicate a resolution capability of at least 30 nm half pitch. As resist films have become thinner to mitigate aspect ratio related pattern collapse, etching has become more challenging. We have studied the ICP plasma etching of high-resolution patterns in sub 40 nm thickness films of the fullerene resist. Silicon structures of 20 nm width and more than 100 nm height have been demonstrated. Additionally we have developed a fullerene based spin-on-carbon for use in a tri-layer etching scheme allowing aspect ratios greater than 19:1 to be achieved in room temperature ICP etching of sub 30 nm patterns. The same trilayer scheme has also been deployed for colloidal lithography fabrication of sub 100 nm silicon pillars with aspect ratios >;17:1.
Keywords :
durability; electron resists; fullerenes; nanofabrication; sputter etching; EUV lithography; ICP plasma etching; Iinewidth roughness; chemically amplified fullerene resists; colloidal lithography fabrication; electron beam lithography properties; fullerene based spin-on-carbon; high etch durability; high performance ultra thin resists; molecular resists; resist films; silicon pillars; silicon structures; sparse resolution; spin-on fullerene hardmasks; triIayer etching; Lithography; Polymers; Resists;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location :
Birmingham
ISSN :
1944-9399
Print_ISBN :
978-1-4673-2198-3
Type :
conf
DOI :
10.1109/NANO.2012.6322209
Filename :
6322209
Link To Document :
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