Title :
Bandwidth enhancement of cascode distributed amplifiers using inductive peaking technique and modified m-derived network
Author :
Liu, Yu-Cheng ; Weng, Shou-Hsien ; Chang, Hong-Yeh
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
Abstract :
Bandwidth enhancement of cascode distributed amplifiers (DAs) is described in this paper. A modified m-derived network and inductive peaking technique are adopted to enhance the bandwidth of the DAs. The cascode gain cell is employed to improve gain bandwidth. 2- and 8-stage fully integrated DAs in a 0.5-μm GaAs enhancement- and depletion-mode high electron-mobility transistor (E/D-mode HEMT) technology are presented using the proposed design methodology. The measured bandwidths of the 2- and 8-stage DAs are 43.6 and 38.5 GHz with group delay variations of within 15 and 26 ps, and the measured output power 1-dB compress point (P1dB) are 0 and 13 dBm, respectively.
Keywords :
III-V semiconductors; distributed amplifiers; gallium arsenide; high electron mobility transistors; millimetre wave amplifiers; millimetre wave field effect transistors; E-D-mode HEMT technology; GaAs; bandwidth 38.5 GHz; bandwidth 43.6 GHz; bandwidth enhancement; cascode distributed amplifiers; cascode gain cell; depletion-mode high electron-mobility transistor; enhancement-mode high electron-mobility transistor; gain bandwidth; group delay variations; inductive peaking technique; modified m-derived network; size 0.5 mum; time 15 ps; time 26 ps; Bandwidth; Distributed amplifiers; Frequency measurement; Gain; Gallium arsenide; HEMTs; Power transmission lines; Distributed amplifier (DA); enhancement- and depletion-mode high electron-mobility transistor (E/D-mode HEMT); monolithic microwave integrated circuit (MMIC);
Conference_Titel :
Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4577-2034-5