Title :
PZT thin films for RF MEMS applications
Author :
Polcawich, Ronald G. ; Pulskamp, Jeff ; Judy, Dan ; Kaul, Roger ; Chandrahalim, Hengky ; Bhave, Sunil ; Dubey, Madan
Author_Institution :
US Army Research Laboratory, AMSRD-ARL-SE-RL, 2800 Powder Mill Road, Adelphi, MD, 20783, USA
Abstract :
In this article, we report on the successful demonstration of lead zirconate titanate (PZT) thin film based MEMS devices for use in radio frequency (RF) systems. Both series and shunt switches operating at or below 10 V and 15 V, respectively, have been developed capable of operating over a wide temperature range. These switches have also been integrated into a 17 GHz, 2-bit reflection phase shifter with an average insertion loss of 2.96 dB. Along with switches and phase shifters, PZT based MEMS resonators show promise in the sub-GHz regime with demonstrated insertion loss values near ??12 dB and theoretical predictions approaching better than ??3 dB.
Keywords :
Insertion loss; Microelectromechanical devices; Phase shifters; Radio frequency; Radiofrequency microelectromechanical systems; Switches; Temperature distribution; Thin film devices; Titanium compounds; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location :
Santa Re, NM, USA
Print_ISBN :
978-1-4244-2744-4
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2008.4693748
