DocumentCode :
1605512
Title :
New Design Approach to minimise IMD Asymmetry and IM3 products in Microwave FETs
Author :
Colantonio, P. ; Giannini, F. ; Limiti, E. ; Nanni, A.
Author_Institution :
Univ. of Rome Tor Vergata, Rome
fYear :
2006
Firstpage :
13
Lastpage :
17
Abstract :
The minimisation of asymmetry between the lower and upper side band intermodulation products is discussed in the first part of this contribution using a Volterra series analysis. From the inferred relationships, not only the base band but also the harmonic device terminations effects were analysed, establishing new conditions to minimise the IMD asymmetry. Under these conditions and following the Volterra approach, also the IM3 products were minimized through a suitable second harmonic load selection as verified by nonlinear simulations on a HEMT device model. This approach allows to avoid complex linearization schemes in the base band frequencies obtaining similar results and simpler design.
Keywords :
Volterra series; intermodulation; microwave field effect transistors; Volterra series analysis; base band frequencies; harmonic device terminations effects; microwave FET; second harmonic load selection; side band intermodulation products; Circuit simulation; FETs; Frequency; HEMTs; Harmonic analysis; Microwave devices; Minimization; Nonlinear distortion; Pulse measurements; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwaves, Radar & Wireless Communications, 2006. MIKON 2006. International Conference on
Conference_Location :
Krakow
Print_ISBN :
978-83-906662-7-3
Type :
conf
DOI :
10.1109/MIKON.2006.4345094
Filename :
4345094
Link To Document :
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