Title :
Graphene on different substrates for sensing applications
Author :
Spencer, M. ; Singh, A. ; Uddin, M.A. ; Nomani, Md W K ; Tompa, G. ; Sbrockey, N. ; Tolson, J. ; Shields, V. ; Hwang, J. ; Koley, G.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
Comparison between the sensing behavior of graphene grown on different substrates has been carried out in the light of charge carrier transport properties and molecular doping. Experimentally obtained sensing results indicate that, in epitaxial multilayer graphene (MLG) grown on C-face SiC, p-type charge carriers are dominant and in Si-face few layer graphene (FLG), charge carriers are mostly n-type. Graphene grown by chemical vapor deposition (CVD) on thin copper foils has strong p-type carrier density while graphene on sapphire appears to be almost neutral in nature. Molecular doping induced changes in carrier densities (both n- and p-type) in C and Si-faces epitaxial graphene, CVD graphene on copper and sapphire has been correlated with the shifts in Fermi level.
Keywords :
carrier density; chemical vapour deposition; epitaxial growth; epitaxial layers; graphene; sapphire; sensors; silicon compounds; C-face; CVD; FLG; Fermi level; MLG; SiC; charge carrier transport property; chemical vapor deposition; copper foils; epitaxial multilayer graphene; few layer graphene; graphene; molecular doping; p-type charge carriers; sensing application; substrates; Epitaxial growth; Power supplies; Sensors; Silicon carbide;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-4673-2198-3
DOI :
10.1109/NANO.2012.6322236
