Title :
Novel simulation method and possibility of class-s power amplifier for LTE base station
Author :
Lee, Sung Jun ; Kim, Young Hoon ; Kim, Joon Hyung ; Jung, Jae Ho
Author_Institution :
Electron. & Telecommun. Res. Inst. (ETRI), Daejeon, South Korea
Abstract :
This paper presents novel simulation method and possibility of class S power amplifier for LTE base station. A baseband signal with 9.7 dB Peak-to-Average Power Ratio (PAPR) is used to represent LTE signal, which is about top 12-percent of the PAPR statistics. The channel bandwidth of 10 MHz and carrier frequency of 890.88 MHz is used to represent prearranged LTE service in Korea. A Band-Pass Delta-Sigma Modulator (BPDSM) is used to generate a digital-like signal. A Gallium-Nitride (GaN) based Complementary Voltage Switched Class D (CVSCD) with this digital-like signal is simulated and shows 31 % PAE and 2 % EVM.
Keywords :
III-V semiconductors; Long Term Evolution; band-pass filters; delta-sigma modulation; gallium compounds; power amplifiers; pulse amplifiers; wide band gap semiconductors; wireless channels; CVSCD; Class-S power amplifier; LTE base station; LTE signal; PAPR statistics; band-pass delta-sigma modulator; carrier frequency; channel bandwidth; gallium-nitride-based complementary voltage switched class D; peak-to-average power ratio; Impedance; Microwave amplifiers; Modulation; Peak to average power ratio; Power amplifiers; Switches; Delta-sigma modulation; mobile communication; power amplifiers; pulse amplifiers;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4577-2034-5
