Title :
The dependence of optical and electrical properties of GaN nanowires on the growth temperature Paper #NA003
Author :
Talin, A. Alec ; Wang, George T. ; Lai, Elaine ; Anderson, Richard J.
Author_Institution :
Sandia National Laboratories, Livermore, CA 94550, USA
Abstract :
The optical and electrical transport of GaN nanowires grown by metal catalyzed metal organic chemical vapor deposition was investigated as a function of substrate temperature during growth. As the growth temperature increased from 800??C to 900??C the electrical conduction mechanism changed from space charge limited to ohmic transport , the nanowire resistivity dropped from ~107 ohm-cm to ~10??3 ohm-cm, and the band edge luminescence increased by more than two orders of magnitude. A strong correlation between the resistivity and the fraction of band edge luminescence for individual nanowires was observed.
Keywords :
Conductivity; Crystallization; Gallium nitride; Integrated optics; Luminescence; Nanowires; Optical films; Plasma temperature; Substrates; Temperature dependence;
Conference_Titel :
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location :
Santa Re, NM, USA
Print_ISBN :
978-1-4244-2744-4
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2008.4693793
