DocumentCode :
1606195
Title :
Design of UWB low power low noise amplifier with body bias technique
Author :
Hsu, Meng-Ting ; Wu, Kun-Long
Author_Institution :
Dept. & Inst. of Electron. Eng., Nat. Yunlin Univ. of Sci. & Technol., Yunlin, Taiwan
fYear :
2011
Firstpage :
227
Lastpage :
230
Abstract :
In this paper, a low power circuit with body bias technique of UWB LNA which is implemented in a standard TSMC 0.18μm CMOS process was presented. The power reduction can be achieved by the body bias technique. From the measured results, the S11 is lower than -12dB, S22 is lower than -10dB and forward gain S21 is an average value with 12dB. The noise figure is from 4 to 5.7dB within the whole band. The power dissipation of the whole proposed LNA is 4.6mW.
Keywords :
CMOS analogue integrated circuits; integrated circuit design; low noise amplifiers; low-power electronics; ultra wideband communication; UWB LNA; UWB low power low noise amplifier design; body bias technique; forward gain; noise figure; noise figure 4 dB to 5.7 dB; power dissipation; power reduction; size 0.18 mum; standard TSMC CMOS process; Equations; Frequency measurement; Impedance matching; Noise figure; Portable document format; Power demand; Transistors; Body bias; LNA; Low power; UWB; current-reuse;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4577-2034-5
Type :
conf
Filename :
6173727
Link To Document :
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