Design of UWB low power low noise amplifier with body bias technique

Author

Hsu, Meng-Ting ; Wu, Kun-Long

Author_Institution

Dept. & Inst. of Electron. Eng., Nat. Yunlin Univ. of Sci. & Technol., Yunlin, Taiwan

fYear

2011

Firstpage

227

Lastpage

230

Abstract

In this paper, a low power circuit with body bias technique of UWB LNA which is implemented in a standard TSMC 0.18μm CMOS process was presented. The power reduction can be achieved by the body bias technique. From the measured results, the S11 is lower than -12dB, S22 is lower than -10dB and forward gain S21 is an average value with 12dB. The noise figure is from 4 to 5.7dB within the whole band. The power dissipation of the whole proposed LNA is 4.6mW.

Keywords

CMOS analogue integrated circuits; integrated circuit design; low noise amplifiers; low-power electronics; ultra wideband communication; UWB LNA; UWB low power low noise amplifier design; body bias technique; forward gain; noise figure; noise figure 4 dB to 5.7 dB; power dissipation; power reduction; size 0.18 mum; standard TSMC CMOS process; Equations; Frequency measurement; Impedance matching; Noise figure; Portable document format; Power demand; Transistors; Body bias; LNA; Low power; UWB; current-reuse;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2011 Asia-Pacific

Conference_Location

Melbourne, VIC

Print_ISBN

978-1-4577-2034-5

Type

conf

Filename

6173727

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1606195