Characterization of Low Frequency Noise in Floating Gate NAND Flash Memory

We have characterized the low frequency noise (LFN) in the NAND flash memory string, for the first time, and shown its fundamental properties. As a result, the NAND flash memory shown specific LFN characteristics in conditions such as bit-line bias, word-line bias, read current and program or erase state of each cell in a string. Also the LFN was investigated with program/erase (P/E) cycling of a cell or all cells in a string, and shown several tens mV of maximum threshold voltage fluctuation after ~100 k cycling at 70 nm node. Lastly, we have predicted the effects of the LFN in sub-70 nm NAND flash memory.