Title :
Optimization of Al2O3 Interpoly Dielectric for Embedded Flash Memory Applications
Author :
Wellekens, Dirk ; De Vos, J. ; Van Houdt, J.
Author_Institution :
IMEC, Leuven
Abstract :
In this work we present a thorough investigation of A1203 for use as an interpoly dielectric layer in flash memory devices. By exploring several optimization steps A1203 proves to be an excellent material for embedded flash applications. It is shown that a 17nm A1203 layer in combination with a high temperature post-deposition anneal and either a poly or (TiN) metal gate can provide excellent program/erase performance, data retention, program/erase cycling and data retention after cycling.
Keywords :
embedded systems; flash memories; Al2O3; data retention; embedded flash application; embedded flash memory device; interpoly dielectric layer; Aluminum oxide; Annealing; Channel bank filters; Chemical technology; Dielectric devices; Dielectric materials; Flash memory; Nonvolatile memory; Temperature; Voltage;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2008 and 2008 International Conference on Memory Technology and Design. NVSMW/ICMTD 2008. Joint
Conference_Location :
Opio
Print_ISBN :
978-1-4244-1546-5
Electronic_ISBN :
978-1-4244-1547-2
DOI :
10.1109/NVSMW.2008.9
