Title :
Low noise, low switch loss 0.25µm E/D pHEMT technology
Author :
Yuan, Cheng-Guan ; Liu, S. M Joseph ; Takatani, Shinichiro ; Danzilio, David ; Chung, Jung-Tao ; Chen, Frank ; Chen, Kuan-Jen ; Lo, Hung-Kuan ; Huang, Clement ; Chou, Edison ; Ho, Jiro ; Chen, Risky
Author_Institution :
WIN Semicond. Corp., Tao Yuan Shien, Taiwan
Abstract :
A quarter-micron optical gate, enhancement/depletion (E/D)-mode pseudomorphic high electron mobility transistor (pHEMT) has been developed. The E-mode FET shows high extrinsic transconductance (830mS/mm) and high cut-off frequency (73GHz). The 8×50μm device operating at Vds = 1.8V and Ids = 50 mA/mm also demonstrates a low noise figure of 0.83dB and a high gain at 12 GHz. Linearity shown in IP3 is simultaneously improved. The D-mode FET exhibits a low Ron of 1.3 Ohm.mm, a low gate leakage current of 0.02μA/mm and a short switching time of 130 ns at Vg = -6V, which is suitable for switch applications.
Keywords :
high electron mobility transistors; leakage currents; low noise amplifiers; enhancement-depletion mode; frequency 73 GHz; gate leakage current; noise figure 0.83 dB; optical gate; pHEMT technology; pseudomorphic high electron mobility transistor; size 0.25 mum; switch loss; switching time; voltage 1.8 V; Logic gates; Noise figure; Optical switches; PHEMTs; Performance evaluation; D-mode; E-mode; GaAs; IP3; LNA; available gain; base station; leakage current; linearity; noise figure; optical gate; pHEMT; quarter micron;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4577-2034-5
