Title :
In-Ga-O Based Double-Heater Phase Change Memory Cell
Author :
Wang, S.-L. ; Chen, C.-Y. ; Hsieh, M.-K. ; Lee, W.C. ; Kung, A.H. ; Peng, L.-H.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Abstract :
We report a new type of phase-change materials based upon the compound of In-Ga-O. It is found to exhibit two-order of magnitude resistivity change between the high-resistive amorphous phase and the low-resistive cubic phase at a phase-change temperature ~250degC. When the In-Ga-O is incorporated into a nonvolatile phase change memory (PCM) device with a double-heater (DH) structure, it exhibits an on/off resistance ratio of 1000 and cycling over 300 times which are superior to those observed on a single-heater (SH) PCM device. These results, together with a low bias point of 70 muA at 6.5 volt and 1.5 mA at 3.5 volt, respectively, for set/ reset operation of the DH-PCM device to the crystalline/amorphous state, suggest that In-Ga-O is a promising material candidate for low power application of PCM devices.
Keywords :
gallium compounds; indium compounds; phase change materials; random-access storage; crystalline-amorphous state; current 1.5 mA; double-heater phase change memory cell; high-resistive amorphous phase; low-resistive cubic phase; magnitude resistivity; on-off resistance ratio; voltage 6.5 V; Amorphous materials; Crystalline materials; Crystallization; Electrons; Nonvolatile memory; Phase change materials; Phase change memory; Phase change random access memory; Semiconductor films; Temperature;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2008 and 2008 International Conference on Memory Technology and Design. NVSMW/ICMTD 2008. Joint
Conference_Location :
Opio
Print_ISBN :
978-1-4244-1546-5
Electronic_ISBN :
978-1-4244-1547-2
DOI :
10.1109/NVSMW.2008.15
