Title :
Solar Blind MSM-Photodetectors Based on AlxGa1-xN/GaN Heterostructures Grown by MOCVD
Author :
Averine, S.V. ; Kuznetzov, P.I. ; Zhitov, V.A. ; Alkeev, N.V. ; Lyubchenko, V.E.
Author_Institution :
Inst. of Radio Eng. & Electron. Russian Acad. of Sci., Fryazino
Abstract :
The MOCVD technology of semiconductor heterostructures for ultraviolet photodetectors was developed. Solar blind AlGaN/GaN MSM photodetectors were fabricated and investigated. Directly on the MSM-diode we have measured a Schottky barrier height of 1.1 eV for Ni and 1.4 eV for Mo contacts on AlGaN. Effect of different buffer layers on the detector performances has been demonstrated. Detectors exhibit low dark currents and high sensitivity within the range of 250 -290 nm. Effect of high optical excitation level on detector performance is discussed.
Keywords :
MOCVD; Schottky barriers; aluminium compounds; gallium compounds; metal-semiconductor-metal structures; photodetectors; wide band gap semiconductors; MOCVD; Schottky barrier; buffer layers; semiconductor heterostructures; solar blind MSM-photodetectors; ultraviolet photodetectors; Aluminum gallium nitride; Buffer layers; Dark current; Detectors; Gallium nitride; MOCVD; Optical buffering; Optical sensors; Photodetectors; Schottky barriers;
Conference_Titel :
Microwaves, Radar & Wireless Communications, 2006. MIKON 2006. International Conference on
Conference_Location :
Krakow
Print_ISBN :
978-83-906662-7-3
DOI :
10.1109/MIKON.2006.4345135
