Title :
Scaling Properties of Doped Sb2Te Phase Change Line Cells
Author :
Jedema, F.J. ; ´t Zandt, M.A.A. ; Wolters, Rob A. M. ; Castro, David Tio ; Hurkx, Godefridus Adrianus Maria ; Delhougne, R.
Author_Institution :
NXP-TMSC Res. Center NXP Semicond., Eindhoven
Abstract :
For phase change random access memory applications, the scaling perspective of the 3 main programming parameters is essential. The programming time will largely determine the obtainable data rate. The required programming current will largely determine the transistor size and hence the obtainable memory density. Finally, the programming voltage should preferably not exceed the transistor driving voltage. In this paper, the scaling perspective for these 3 main programming parameters is investigated for doped Sb2Te PCRAM line cells.
Keywords :
antimony compounds; random-access storage; PCRAM line cell; Sb2Te; phase change line cell; phase change random access memory; programming voltage; scaling property; Crystallization; Electric resistance; Integrated circuit technology; Nonvolatile memory; Phase change materials; Phase change memory; Phase change random access memory; Semiconductor materials; Temperature distribution; Voltage;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2008 and 2008 International Conference on Memory Technology and Design. NVSMW/ICMTD 2008. Joint
Conference_Location :
Opio
Print_ISBN :
978-1-4244-1546-5
Electronic_ISBN :
978-1-4244-1547-2
DOI :
10.1109/NVSMW.2008.18
