Scaling Properties of Doped Sb2Te Phase Change Line Cells

Author

Jedema, F.J. ; ´t Zandt, M.A.A. ; Wolters, Rob A. M. ; Castro, David Tio ; Hurkx, Godefridus Adrianus Maria ; Delhougne, R.

Author_Institution

NXP-TMSC Res. Center NXP Semicond., Eindhoven

fYear

2008

Firstpage

43

Lastpage

45

Abstract

For phase change random access memory applications, the scaling perspective of the 3 main programming parameters is essential. The programming time will largely determine the obtainable data rate. The required programming current will largely determine the transistor size and hence the obtainable memory density. Finally, the programming voltage should preferably not exceed the transistor driving voltage. In this paper, the scaling perspective for these 3 main programming parameters is investigated for doped Sb₂Te PCRAM line cells.

Keywords

antimony compounds; random-access storage; PCRAM line cell; Sb₂Te; phase change line cell; phase change random access memory; programming voltage; scaling property; Crystallization; Electric resistance; Integrated circuit technology; Nonvolatile memory; Phase change materials; Phase change memory; Phase change random access memory; Semiconductor materials; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Semiconductor Memory Workshop, 2008 and 2008 International Conference on Memory Technology and Design. NVSMW/ICMTD 2008. Joint

Conference_Location

Opio

Print_ISBN

978-1-4244-1546-5

Electronic_ISBN

978-1-4244-1547-2

Type

conf

DOI

10.1109/NVSMW.2008.18

Filename

4531818