• DocumentCode
    1606626
  • Title

    Improvement of Endurance and Switching Stability of Forming-Free CuxO RRAM

  • Author

    Lv, H.B. ; Yin, Mei ; Zhou, Peng ; Tang, T.A. ; Ba-Chen ; Lin, Y.Y.

  • Author_Institution
    Sch. of Microelectron. & State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai
  • fYear
    2008
  • Firstpage
    52
  • Lastpage
    53
  • Abstract
    Cu-oxide grown by plasma oxidation is found typically composed of upper CuO layer and inner graded CuxO. The initial forming process leads to endurance degradation but can be improved by annealing in an oxygen deficient ambient. By using ramped pulse and verification algorithm, the endurance and programming voltage shift are further ameliorated.
  • Keywords
    annealing; copper compounds; forming processes; oxidation; random-access storage; switching circuits; CuxO RRAM; annealing; forming process; plasma oxidation; switching stability; Application specific integrated circuits; Breakdown voltage; CMOS process; Degradation; Microelectronics; Oxidation; Plasma measurements; Random access memory; Semiconductor device manufacture; Stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Semiconductor Memory Workshop, 2008 and 2008 International Conference on Memory Technology and Design. NVSMW/ICMTD 2008. Joint
  • Conference_Location
    Opio
  • Print_ISBN
    978-1-4244-1546-5
  • Electronic_ISBN
    978-1-4244-1547-2
  • Type

    conf

  • DOI
    10.1109/NVSMW.2008.21
  • Filename
    4531821
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1606626