Title :
Development of high TC PMN-PZT piezoelectric single crystals by the solid-state crystal growth (SSCG) technique
Author :
Lee, H.-Y. ; Zhang, S.J. ; Shrout, T.R.
Author_Institution :
Materials Research Institute, Pennsylvania State University, University Park, 16802, USA
Abstract :
Single crystals in the ternary MPB PM-NPZ-PT system with relatively high TCs and ECs were fabricated by the solid-state single crystal growth (SSCG) technique and their dielectric and piezoelectric properties characterized. The dc bias effect on TRT (or the application usage temperature range), the high field unipolar strain, and the strain fatigue behavior induced by a phase change were investigated. Compared to PMN-PT single crystals, the high TC/EC PMN-PZT single crystals (TRT=144??C and EC=4.6kV/cm) were found to exhibit a much wider usage range with respect to electric field as well as temperature, and thus are better candidates for application in transducers and actuators.
Keywords :
Capacitive sensors; Crystalline materials; Crystallization; Crystals; Dielectrics; Fatigue; Piezoelectric materials; Solid state circuits; Strain measurement; Temperature distribution;
Conference_Titel :
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location :
Santa Re, NM, USA
Print_ISBN :
978-1-4244-2744-4
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2008.4693824
