• DocumentCode
    1606646
  • Title

    Development of high TC PMN-PZT piezoelectric single crystals by the solid-state crystal growth (SSCG) technique

  • Author

    Lee, H.-Y. ; Zhang, S.J. ; Shrout, T.R.

  • Author_Institution
    Materials Research Institute, Pennsylvania State University, University Park, 16802, USA
  • Volume
    3
  • fYear
    2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Single crystals in the ternary MPB PM-NPZ-PT system with relatively high TCs and ECs were fabricated by the solid-state single crystal growth (SSCG) technique and their dielectric and piezoelectric properties characterized. The dc bias effect on TRT (or the application usage temperature range), the high field unipolar strain, and the strain fatigue behavior induced by a phase change were investigated. Compared to PMN-PT single crystals, the high TC/EC PMN-PZT single crystals (TRT=144??C and EC=4.6kV/cm) were found to exhibit a much wider usage range with respect to electric field as well as temperature, and thus are better candidates for application in transducers and actuators.
  • Keywords
    Capacitive sensors; Crystalline materials; Crystallization; Crystals; Dielectrics; Fatigue; Piezoelectric materials; Solid state circuits; Strain measurement; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
  • Conference_Location
    Santa Re, NM, USA
  • ISSN
    1099-4734
  • Print_ISBN
    978-1-4244-2744-4
  • Electronic_ISBN
    1099-4734
  • Type

    conf

  • DOI
    10.1109/ISAF.2008.4693824
  • Filename
    4693824