DocumentCode
1606646
Title
Development of high TC PMN-PZT piezoelectric single crystals by the solid-state crystal growth (SSCG) technique
Author
Lee, H.-Y. ; Zhang, S.J. ; Shrout, T.R.
Author_Institution
Materials Research Institute, Pennsylvania State University, University Park, 16802, USA
Volume
3
fYear
2008
Firstpage
1
Lastpage
2
Abstract
Single crystals in the ternary MPB PM-NPZ-PT system with relatively high TCs and ECs were fabricated by the solid-state single crystal growth (SSCG) technique and their dielectric and piezoelectric properties characterized. The dc bias effect on TRT (or the application usage temperature range), the high field unipolar strain, and the strain fatigue behavior induced by a phase change were investigated. Compared to PMN-PT single crystals, the high TC/EC PMN-PZT single crystals (TRT=144??C and EC=4.6kV/cm) were found to exhibit a much wider usage range with respect to electric field as well as temperature, and thus are better candidates for application in transducers and actuators.
Keywords
Capacitive sensors; Crystalline materials; Crystallization; Crystals; Dielectrics; Fatigue; Piezoelectric materials; Solid state circuits; Strain measurement; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location
Santa Re, NM, USA
ISSN
1099-4734
Print_ISBN
978-1-4244-2744-4
Electronic_ISBN
1099-4734
Type
conf
DOI
10.1109/ISAF.2008.4693824
Filename
4693824
Link To Document