On the Influence of Fin Corner Rounding in 3D Nanocrystal Flash Memories

Author

Nowak, E. ; Perniola, L. ; Jahan, C. ; Scheiblin, P. ; Reimbold, G. ; Salvo, B. De ; Boulanger, F. ; Ghibaudo, G.

Author_Institution

CEA/Leti-MINATEC, Grenoble

fYear

2008

Firstpage

61

Lastpage

63

Abstract

This work presents an original semi-analytical model capable to predict the electrical behavior of nanocrystal (NCs) trigate Fin-FET structures programmed under uniform tunneling (NAND scheme). Experimental data from memory devices with different gate stacks are quantitatively fitted, confirming the efficiency of our model. This model allows for a quantitative understanding of the influence of the FinFET geometrical variations on memory performances. The impact of the fin corner rounding appears to be the most critical feature in such 3D structures.

Keywords

MOSFET; flash memories; integrated circuit modelling; nanostructured materials; 3D nanocrystal flash memories; electrical behavior; fin corner rounding; nanocrystal trigate Fin-FET structures; semianalytical model; uniform tunneling; Analytical models; FinFETs; Flash memory; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Image storage; Nanocrystals; Tin; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Semiconductor Memory Workshop, 2008 and 2008 International Conference on Memory Technology and Design. NVSMW/ICMTD 2008. Joint

Conference_Location

Opio

Print_ISBN

978-1-4244-1546-5

Electronic_ISBN

978-1-4244-1547-2

Type

conf

DOI

10.1109/NVSMW.2008.24

Filename

4531824