Integration of Silicon Nanocrystal Memory Arrays with HfAlOx Based Interpoly Dielectric

Author

Molas, G. ; Bocquet, M. ; Buckley, J. ; Grampeix, H. ; Colonna, J.P. ; Masarotto, L. ; Martin, F. ; Gély, M. ; Salvo, B. De ; Deleonibus, S. ; Golubovic, D.S. ; van Duuren, M.J. ; Bongiorno, C. ; Lombardo, S.

Author_Institution

CEA Leti-MINATEC, Grenoble

fYear

2008

Firstpage

64

Lastpage

67

Abstract

The integration of silicon nanocrystal (Si-nc) nonvolatile memory (NVM) arrays with HfAlOx based interpoly dielectric (IPD) is presented for the first time. The data obtained on array vehicles programmed in Fowler-Nordheim operation regime are in excellent agreement with previously presented results on single cells, as well as theoretical data and allow the evaluation of the scalability of the Si-nc concept.

Keywords

dielectric materials; elemental semiconductors; hafnium compounds; logic arrays; nanostructured materials; random-access storage; silicon; Fowler-Nordheim operation; array vehicles; interpoly dielectric; nonvolatile memory arrays; silicon nanocrystal memory arrays; High K dielectric materials; High-K gate dielectrics; Nanocrystals; Nonvolatile memory; Scalability; Silicon compounds; Temperature; Tunneling; Vehicles; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Semiconductor Memory Workshop, 2008 and 2008 International Conference on Memory Technology and Design. NVSMW/ICMTD 2008. Joint

Conference_Location

Opio

Print_ISBN

978-1-4244-1546-5

Electronic_ISBN

978-1-4244-1547-2

Type

conf

DOI

10.1109/NVSMW.2008.25

Filename

4531825