DocumentCode
1606711
Title
On the Influence of Molecular Linker on Charge Transfer Rate in Hybrid Molecular (Ferrocene)/Silicon Field Effect Memories
Author
Buckley, J. ; Pro, T. ; Barattin, R. ; Calborean, A. ; Gély, M. ; Huang, K. ; Delapierre, G. ; Duclairoir, F. ; Jalaguier, E. ; Maldivi, P. ; Salvo, B. De ; Deleonibus, S. ; Ghibaudo, G.
Author_Institution
CEA, LETI-MINATEC, Grenoble
fYear
2008
Firstpage
68
Lastpage
71
Abstract
In this work, a physical and electrical investigation of hybrid molecular/Si memory capacitor structures is proposed, where redox active molecules act as storage medium. Ferrocene molecules were grafted on (100) Silicon either directly or with a chemical linker, in order to investigate the electron transfer properties of the molecule/silicon system. The chemical structures of the molecular layers were analyzed with X-ray photoelectron spectroscopy (XPS). Cyclic voltammetry on macroelectrodes and impedance spectroscopy on capacitor structures were performed in order to characterize the charge transfer between the redox molecules and the Silicon, showing the effect of the organic linker. Finally, to explain our results, an original electrical model of ferrocene/Si field effect devices is proposed. The model allows to give a theoretical confirmation of the influence of the linker over the redox energy. DFT calculations provide further explanations of the effect of the linker on redox energy. The results obtained in this paper show the strong impact of the engineering of the redox molecules on the electron transfer properties.
Keywords
X-ray photoelectron spectra; capacitors; discrete Fourier transforms; field effect devices; voltammetry (chemical analysis); DFT calculations; X-ray photoelectron spectroscopy; XPS; charge transfer rate; chemical linker; cyclic voltammetry; electron transfer properties; impedance spectroscopy; macroelectrodes; memory capacitor structures; molecular linker; molecule-silicon system; redox active molecules; redox energy; silicon field effect memories; Capacitance-voltage characteristics; Capacitors; Charge transfer; Chemical analysis; Electrons; Fabrication; Nitrogen; Nonvolatile memory; Silicon compounds; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Non-Volatile Semiconductor Memory Workshop, 2008 and 2008 International Conference on Memory Technology and Design. NVSMW/ICMTD 2008. Joint
Conference_Location
Opio
Print_ISBN
978-1-4244-1546-5
Electronic_ISBN
978-1-4244-1547-2
Type
conf
DOI
10.1109/NVSMW.2008.26
Filename
4531826
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