Title :
N-Channel Complementary Pairing in Nitride Trap Memory
Author :
Ogura, Naoto ; Ogura, Shotaroh ; Iwasaki, Takuya ; Kikuchi, Takashi ; Saito, Takashi ; Matsuda, Tadamitsu ; Takimoto, K. ; Nakagawa, Koichi ; Ando, K. ; Yamada, J. ; Saito, Takashi
Author_Institution :
NEC Electron., Halo LSI, Inc., Tokyo
Abstract :
With one-pulse write and a complementary self-referencing approach, highly reliable, low density byte-erase EEPROM with small area can be achieved. The complementary approach can also be applied to higher density arrays to give higher cycling capability and or high speed read.
Keywords :
EPROM; EEPROM; N-channel complementary pairing; complementary self-referencing; nitride trap memory; Character generation; Circuits; EPROM; Electron traps; Frequency; MONOS devices; Nonvolatile memory; Switches; Temperature distribution; Voltage;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2008 and 2008 International Conference on Memory Technology and Design. NVSMW/ICMTD 2008. Joint
Conference_Location :
Opio
Print_ISBN :
978-1-4244-1546-5
Electronic_ISBN :
978-1-4244-1547-2
DOI :
10.1109/NVSMW.2008.28
