• DocumentCode
    1606736
  • Title

    N-Channel Complementary Pairing in Nitride Trap Memory

  • Author

    Ogura, Naoto ; Ogura, Shotaroh ; Iwasaki, Takuya ; Kikuchi, Takashi ; Saito, Takashi ; Matsuda, Tadamitsu ; Takimoto, K. ; Nakagawa, Koichi ; Ando, K. ; Yamada, J. ; Saito, Takashi

  • Author_Institution
    NEC Electron., Halo LSI, Inc., Tokyo
  • fYear
    2008
  • Firstpage
    77
  • Lastpage
    78
  • Abstract
    With one-pulse write and a complementary self-referencing approach, highly reliable, low density byte-erase EEPROM with small area can be achieved. The complementary approach can also be applied to higher density arrays to give higher cycling capability and or high speed read.
  • Keywords
    EPROM; EEPROM; N-channel complementary pairing; complementary self-referencing; nitride trap memory; Character generation; Circuits; EPROM; Electron traps; Frequency; MONOS devices; Nonvolatile memory; Switches; Temperature distribution; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Semiconductor Memory Workshop, 2008 and 2008 International Conference on Memory Technology and Design. NVSMW/ICMTD 2008. Joint
  • Conference_Location
    Opio
  • Print_ISBN
    978-1-4244-1546-5
  • Electronic_ISBN
    978-1-4244-1547-2
  • Type

    conf

  • DOI
    10.1109/NVSMW.2008.28
  • Filename
    4531828
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1606736