Title :
Analytic parameter determination for thermal memory effect compensation circuit in microwave InGaP/GaAs HBT power amplifiers
Author :
Ishikawa, Ryo ; Kimura, Junichi ; Honjo, Kazuhiko
Author_Institution :
Univ. of Electro-Commun., Tokyo, Japan
Abstract :
An analytical design method based on Volterra series including both electrical effects and thermal effects is presented for compensating thermal memory effects in microwave power amplifiers. By using an electrical memory-effect-generation circuit consisting of a multi-stage RC ladder network, the thermal memory effect is directly canceled. Analytical formulas for this canceling condition and circuit parameters have been successfully derived. The validity of the proposed analytical method has been shown for an InGaP/GaAs HBT power amplifier operating at 1.95 GHz. The analytical design results are in good agreement with measured results.
Keywords :
III-V semiconductors; Volterra series; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave power amplifiers; InGaP-GaAs; Volterra series; analytic parameter determination; analytical design method; electrical memory-effect-generation circuit; frequency 1.95 GHz; microwave HBT power amplifiers; multistage RC ladder network; thermal memory effect compensation circuit; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit modeling; Mathematical model; Microwave circuits; Thermal analysis; Distortion compensation; IMD; InGaP/GaAs HBT; Power amplifiers; Self heating; Thermal memory effect;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4577-2034-5
