Title :
A 15ns 4Mb NVSRAM in 0.13u SONOS Technology
Author :
Fliesler, Michael ; Still, David ; Hwang, Jeong-Mo
Author_Institution :
Cypress Semicond., San Jose, CA
Abstract :
SONOS based 4Mb nvSRAM has been developed which combines a fast access CMOS SRAM array with a highly reliable non-volatile memory array. The overall architecture and operation of the integrated architecture is discussed The non-volatile memory characteristics including endurance and retention at both the SONOS transistor-level as well as 4Mb product-level are demonstrated The nonvolatile memory uses Fowler-Nordheim program and erase to achieve excellent reliability, with EOL window > 1V after 10 years of retention at 85degC and 200K endurance cycles.
Keywords :
CMOS memory circuits; random-access storage; CMOS SRAM array; Fowler-Nordheim program; NVSRAM; SONOS transistor-level; memory size 4 MByte; nonvolatile memory array; size 0.13 micron; Batteries; CMOS technology; Computer architecture; Driver circuits; Microcontrollers; Nonvolatile memory; Power supplies; Random access memory; SONOS devices; Springs;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2008 and 2008 International Conference on Memory Technology and Design. NVSMW/ICMTD 2008. Joint
Conference_Location :
Opio
Print_ISBN :
978-1-4244-1546-5
Electronic_ISBN :
978-1-4244-1547-2
DOI :
10.1109/NVSMW.2008.30
