Title :
Influence and Comparison of Cu and Alu Metallization Schemes on Endurance of Embedded Flash Memories
Author :
Tempel, G. ; Erler, F. ; Fruehauf, J. ; Pantfoerder, J. ; Schaedler, K. ; Schulte, S.
Author_Institution :
IFD Technol. Center, Infineon Technol., Dresden
Abstract :
The hydrogen budget and the permeability of the deposition layers in the metallization layers of flash memories determine the program / erase performance of these cells. In general these layers must be optimized together to get the best endurance.
Keywords :
embedded systems; flash memories; integrated circuit metallisation; deposition layers; embedded flash memory; metallization schemes; permeability; program/erase performance; Flash memory; Gases; Hydrogen; Metallization; Permeability; Plasma materials processing; Plasma measurements; Plasma temperature; Semiconductor films; Silicon;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2008 and 2008 International Conference on Memory Technology and Design. NVSMW/ICMTD 2008. Joint
Conference_Location :
Opio
Print_ISBN :
978-1-4244-1546-5
Electronic_ISBN :
978-1-4244-1547-2
DOI :
10.1109/NVSMW.2008.31
