Highly Scalable Fe(Ferroelectric)-NAND Cell with MFIS(Metal-Ferroelectric-Insulator-Semiconductor) Structure for Sub-10nm Tera-Bit Capacity NAND Flash Memories

Author

Sakai, Shigeki ; Takahashi, Mitsue ; Takeuchi, Ken ; Li, Qiu-Hong ; Horiuchi, Takeshi ; Wang, Shouyu ; Yun, Kwi-Young ; Takamiya, Makoto ; Sakurai, Takayasu

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba

fYear

2008

Firstpage

103

Lastpage

105

Abstract

Characteristics of MFIS-type ferroelectric-gate FETs as a NAND flash memory cell are investigated. Lower voltage operations compared with floating-gate/MONOS NAND cells are realized. Excellent program and read disturb characteristics are presented. High endurance and long data retention results are also described. Due to the voltage-driven low-voltage and scalable properties, ferroelectric-gate FETs are most suitable for the sub- lOnm NAND flash memories.

Keywords

MFIS structures; NAND circuits; field effect transistors; flash memories; MFIS-type ferroelectric-gate FET; NAND flash memories; ferroelectric-NAND cell; metal-ferroelectric-insulator-semiconductor; structure; Electronics industry; FETs; Ferroelectric materials; Industrial electronics; MONOS devices; Nonvolatile memory; Polarization; Pulse measurements; Space vector pulse width modulation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Semiconductor Memory Workshop, 2008 and 2008 International Conference on Memory Technology and Design. NVSMW/ICMTD 2008. Joint

Conference_Location

Opio

Print_ISBN

978-1-4244-1546-5

Electronic_ISBN

978-1-4244-1547-2

Type

conf

DOI

10.1109/NVSMW.2008.36

Filename

4531836