Performance Enhancement in Ultra-Scaled SONOS FinFlash by Inclusion of High-k Dielectric in the Gate Stack

Author

Jahan, C. ; Nowak, E. ; Perniola, L. ; Gely, M. ; Molas, G. ; Lombardo, S. ; Salvo, B. De ; Deleonibus, S.

Author_Institution

CEA/LETI-Minatec, Grenoble

fYear

2008

Firstpage

106

Lastpage

108

Abstract

This paper presents the technological process and electrical behaviour of SONOS FinFlash devices fabricated on silicon-on-insulator (SOI) substrates and including HfO₂ in the inter poly dielectric (IPD). Using trimming techniques, ultra-scaled devices were processed with aggressive dimensions down to 10 nm channel width and 30 nm gate length. Good performances are obtained in Fowler-Nordheim (FN) operation on these structures.

Keywords

dielectric materials; flash memories; hafnium compounds; high-k dielectric thin films; silicon-on-insulator; Fowler-Nordheim operation; HfO₂; SONOS FinFlash; gate stack; high-k dielectric; inter poly dielectric; silicon-on-insulator; size 30 nm; Dielectric devices; Dielectric substrates; Fabrication; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Implants; Leakage current; SONOS devices; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Semiconductor Memory Workshop, 2008 and 2008 International Conference on Memory Technology and Design. NVSMW/ICMTD 2008. Joint

Conference_Location

Opio

Print_ISBN

978-1-4244-1546-5

Electronic_ISBN

978-1-4244-1547-2

Type

conf

DOI

10.1109/NVSMW.2008.37

Filename

4531837