Title :
Scalable HEMT distributed model for millimeter-wave applications
Author :
Hoque, M.E. ; Parker, A.E. ; Heimlich, M. ; Mahon, S.J.
Author_Institution :
Dept. of Electron. Eng., Macquarie Univ., North Ryde, NSW, Australia
Abstract :
A distributed model of GaAs pHEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The intrinsic and extrinsic parameters of the unit cell scaled linearly with respect to unit width of the pHEMT metal structure without any offset error. This linear model is applied to build different peripheral devices by varying the number of gate fingers and the width of the device. The geometrical relationship between number of gate fingers and the gate width are derived to optimize the size of the device.
Keywords :
gallium arsenide; high electron mobility transistors; millimetre wave transistors; semiconductor device models; GaAs; gate fingers; linear model; millimeter-wave applications; pHEMT distributed model; pHEMT metal structure; peripheral devices; scalable HEMT distributed model; unit cell; Integrated circuit modeling; Logic gates; Manifolds; Microwave FETs; Noise measurement; HEMT; millimeter wave transistors; scalability; scattering parameters; semiconductor device modeling;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4577-2034-5
