A wideband LNA with an excellent gain flatness for 60 GHz 16QAM modulation in 65 nm CMOS

Author

Bu, Qinghong ; Li, Ning ; Okada, Kenichi ; Matsuzawa, Akira

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2011

Firstpage

359

Lastpage

362

Abstract

In 60 GHz radios, at least 9 GHz flat gain is needed for the whole band for 16-QAM modulation. A 23 GHz 3 dB bandwidth, 6.3 dB to 17.5 dB variable gain, less than 4.3 dB NF, -7.7 dBm IIP3, four-stage common source LNA is proposed in this paper. The LNA uses guided micro-strip transmission line to realize simple input and inter-stage impedance matching networks. The prototype LNA is implemented in 65 nm CMOS with a chip area of 0.354 mm² including RF pad.

Keywords

CMOS integrated circuits; field effect MIMIC; field effect MMIC; impedance matching; low noise amplifiers; microstrip lines; microwave amplifiers; millimetre wave amplifiers; quadrature amplitude modulation; transmission lines; wideband amplifiers; 16QAM modulation; CMOS integrated circuit; bandwidth 23 GHz; bandwidth 60 GHz; four-stage common source LNA; gain flatness; guided microstrip transmission line; inter-stage impedance matching networks; size 65 nm; wideband LNA; Bandwidth; CMOS integrated circuits; Frequency measurement; Gain; Impedance matching; Noise measurement; Transistors; 60 GHz; LNA; gain flatness; variable-gain;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2011 Asia-Pacific

Conference_Location

Melbourne, VIC

Print_ISBN

978-1-4577-2034-5

Type

conf

Filename

6173760